| PART |
Description |
Maker |
| 2SC3153 2SC3153M |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-247VAR 晶体管|晶体管|叩| 800V的五（巴西）总裁| 6A条一（c）|47VAR
POWER TRANSISTORS(6A/800V/100W)
POWER TRANSISTORS(6A,800V,100W)
POWER TRANSISTORS(6A800V100W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| STU10NB80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET
|
ST Microelectronics
意法半导
|
| IRFPE40 IRFPE40PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
|
International Rectifier
|
| 2SC4149 |
Switching Power Transistor(10A NPN)
|
Shindengen Electric Mfg.Co.Ltd
|
| IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
| BU931T 5941 BUB931T BUB931TT4 |
TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 10A I(C) | TO-263AB
From old datasheet system
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLIGTONS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| 30PUB60 |
Miniature Power Relay, 1 Form C, 10A 250VAC 10A 125VAC, 6A 277VAC
DIODE - 3A 600V 27ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| 4303.2413 |
KEC/KD FUSE DRAWER 2P 10A 10A, 250V AC, MALE, MAINS POWER CONNECTOR, QUICK CONNECT
|
SCHURTER AG
|
